Total dose radiation tolerance of phase change memory cell with GeSbTe alloy

Chinese Physics Letters

Volumn 23, Issue 9, 2006, Pages 2557-2559

  Wu, Liang Cai ^a   Liu, Bo ^a   Song, Zhi Tang ^a   Feng, Gao Ming ^a   Feng, Song Lin ^a   Chen, Bomy ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; CYTOLOGY; GERMANIUM ALLOYS; MAGNETRON SPUTTERING; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PHASE CHANGE MEMORY;

AMORPHOUS STATE; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; CRYSTALLINE STATE; FABRICATION TECHNIQUE; MEMORY CELL ARRAYS; PHASE CHANGE MEMORY CELLS; R.F. MAGNETRON SPUTTERING; RADIATION TOLERANCES; RF-MAGNETRON SPUTTERING; TOTAL DOSE RADIATION;

CELLS;

EID: 33748455298     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/9/057     Document Type: Article

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