Silicide and germanide technology for contacts and gates in MOSFET applications

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 80-83

  Zaima, Shigeaki ^a   Nakatsuka, Osamu ^a   Kondo, Hiroki ^a   Sakashita, Mitsuo ^a   Sakai, Akira ^b   Ogawa, Masaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Contact; Germanide; Interface; Metal gate; MOSFET; Silicide; Silicon; Work function

Indexed keywords

GERMANIUM; GERMANIUM COMPOUNDS; MOSFET DEVICES; NICKEL COMPOUNDS; OHMIC CONTACTS; PLATINUM; PLATINUM METALS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; WORK FUNCTION;

CONTACT; GERMANIDE; INTERFACE; METAL GATE; MOSFET;

SCHOTTKY BARRIER DIODES;

EID: 54849410419     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.097     Document Type: Article

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