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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

(6) Duan, Huigao a,b,c Manfrinato, Vitor R a Yang, Joel K W a,c Winston, Donald a Cord, Bryan M a Berggren, Karl K a

a USA (United States)

b LANZHOU UNIVERSITY (China)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FLIGHT DYNAMICS; OPTICAL VARIABLES MEASUREMENT; SCANNING ELECTRON MICROSCOPY;

DEVELOPMENT PROCESS; DEVELOPMENT RATE; FABRICATED STRUCTURES; LENGTH SCALE; LINE SPREAD FUNCTIONS; PATTERN DENSITY; RESOLUTION LIMITS;

ELECTRONS;

EID: 78650141490 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3501359 Document Type: Article

Times cited : (33)

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