Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 521-523

  Choi, Sookyung ^a   Yan, Minjun ^a,b   Wang, Liang ^a   Adesida, Ilesanmi ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Electron beam lithography (EBL); Hydrogen silsesquioxane (HSQ); Scanning transmission electron microscopy (STEM)

Indexed keywords

DENSE HYDROGENS; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ELECTRON-BEAM LITHOGRAPHY (EBL); HYDROGEN SILSESQUIOXANE (HSQ); NANO-METER SCALE; PATTERN QUALITIES; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM); SILICON NITRIDE MEMBRANES; SILICON SUBSTRATES;

ELECTRIC FIELD MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPES; ELECTRONS; ENERGY DISSIPATION; HYDROGEN; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM LITHOGRAPHY;

EID: 65549112858     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.055     Document Type: Article

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