Silicon nitride hardmask fabrication using a cyclic CHF3 -based reactive ion etching process for vertical profile nanostructures

Journal of Vacuum Science and Technology B

Volumn 28, Issue 6, 2010, Pages 1179-1186

  Kaspar, Peter ^a   Jeyaram, Yogesh ^a,c   Jäckel, Heinz ^a   Foelske, Annette ^b   Kötz, Rüdiger ^b   Bellini, Sandro ^a  

^a ETH ZURICH   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL ANALYSIS; IONS; OXYGEN; PLASMA APPLICATIONS; PLASMA ETCHING; REACTIVE ION ETCHING; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCHING PLASMA; ETCHING PROCESS; ETCHING STEP; FLUOROCARBON FILMS; HARDMASKS; HIGH-ASPECT-RATIO-ETCHING; OXYGEN PLASMA TREATMENTS; OXYGEN PLASMAS; REACTIVE-ION ETCHING; VERTICAL PROFILE;

SILICON NITRIDE;

EID: 78650112404     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3501120     Document Type: Article

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