Anisotropic pattern transfer of fine resist features to silicon nitride via an intermediate titanium layer

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 99-102

  Midha, A ^a   Murad, S K ^a   Weaver, J M R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON CYCLOTRON RESONANCE; MASKS; MULTILAYERS; OXYGEN; POLYMETHYL METHACRYLATES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; TITANIUM;

ANISOTROPIC PATTERN TRANSFER; HIGH ASPECT RATIO; MULTILAYER RESIST SCHEME; TITANIUM LAYER;

DRY ETCHING;

EID: 0031069314     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00164-5     Document Type: Article

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