Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1694-1698

  Grover, Rohit ^a   Hryniewicz, John Vetold ^a,b   King, Oliver Simon ^a,b   Van, Vien ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

^b Little Optics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ASPECT RATIO; HYDROGEN; METHANE; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE;

FACET QUALITY SIDEWALLS;

DRY ETCHING;

EID: 0035441394     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1391252     Document Type: Article

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