Cyclic deposition/etching process to etch a bowing-free SiO2 contact hole

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Lee, Jin Kwan ^a   Jang, Il Yong ^a   Lee, Seung Haeng ^a   Kim, Chang Koo ^b   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON LAYER; AR PLASMAS; CONTACT HOLES; CYCLIC PROCESS; ETCH SELECTIVITY; ETCHING PROCESS; ETCHING STEP; FILM DEPOSITION; HIGH ASPECT RATIO; HOLE DIAMETER; OPEN RATIO; PASSIVATION FILM;

AMORPHOUS CARBON; ETCHING; PASSIVATION; PHOTORESISTS; SILICON COMPOUNDS;

ASPECT RATIO;

EID: 67650602026     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3138134     Document Type: Article

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