Thermally induced decomposition of B4C barrier layers in Mo/Si multilayer structures

Surface and Coatings Technology

Volumn 205, Issue 7, 2010, Pages 2469-2473

  Bruijn, S ^a   van de Kruijs, R W E ^a   Yakshin, A E ^a   Zoethout, E ^a   Bijkerk, F ^a,b  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

B4C; Diffusion; E beam; Interface; Molybdenum; Molybdenumboride; Multilayer; Silicon; Thin films; X ray diffraction

Indexed keywords

B4C; BARRIER LAYERS; BORON ATOM; CRYSTALLINE LAYERS; CRYSTALLINE STATE; DIFFUSION BARRIER LAYERS; E-BEAM; INTERFACE; MO/SI MULTILAYER; MOLYBDENUMBORIDE; THERMAL RESISTANCE; THERMAL STABILITY; THERMALLY INDUCED; THIN FILM MULTILAYERS; X RAY REFLECTION; X-RAY PHOTO;

AMORPHOUS FILMS; BORON; BORON COMPOUNDS; CRYSTALLINE MATERIALS; DIFFRACTION; DIFFUSION BARRIERS; FILM GROWTH; FILM PREPARATION; MOLYBDENUM; MULTILAYER FILMS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAYS;

MULTILAYERS;

EID: 78649744703     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.09.044     Document Type: Article

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