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Defect and Diffusion Forum

Volumn 283-286, Issue , 2008, Pages 657-661

The effect of Mo crystallinity on diffusion through the Si-on-Mo interface in EUV multilayer systems

(4) Bruijn, S a Van De Kruijs, R W E a Yakshin, A E a Bijkerk, F a,b

a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN (Netherlands)

b UNIVERSITY OF TWENTE (Netherlands)

Author keywords

Amorphous Mo; EUVL; Interfaces; Multilayers; Polycrystalline Mo; Si 3n4

Indexed keywords

AMORPHOUS SILICON; DIFFUSION; AMORPHOUS MATERIALS; EXTREME ULTRAVIOLET LITHOGRAPHY; INTERFACES (MATERIALS); MOLYBDENUM; MULTILAYERS; SILICON COMPOUNDS;

AMORPHOUS MO; CRISTALLINITY; EUV MULTILAYERS; GRAZING INCIDENCE ANGLE; MULTI-LAYER SYSTEM; POLYCRYSTALLINE; POLYCRYSTALLINE MO; SI 3N 4; THERMALLY INDUCED DIFFUSION; WIDE-ANGLE X RAYS; CRYSTALLINITIES; DEFECT CONCENTRATIONS; GRAZING INCIDENCE; SI3N4; X-RAY REFLECTOMETRY;

MULTILAYERS; NITROGEN COMPOUNDS;

EID: 62149090246 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.283-286.657 Document Type: Article

Times cited : (11)

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