Microstructure of Mo/Si multilayers with B4C diffusion barrier layers

Applied Optics

Volumn 48, Issue 2, 2009, Pages 155-160

  Nedelcu, IIeana ^a   Van De Kruijs, Robbert W E ^a   Yakshin, Andrey E ^a   Bijkerk, Fred ^a  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS SILICON; BORON; COMPOSITE FILMS; DEPTH PROFILING; DIFFUSION; DIFFUSION BARRIERS; ENTHALPY; MULTILAYERS; PHOTOELECTRON SPECTROSCOPY; SILICON; STOICHIOMETRY; X RAY DIFFRACTION;

BARRIER PROPERTIES; DIFFUSION BARRIER LAYERS; ENHANCED DIFFUSION; FORMATION ENTHALPY; TEMPERATURE-INDUCED; X RAY PHOTOEMISSION SPECTROSCOPY; X RAY REFLECTIVITY; X-RAY DIFFRACTION MEASUREMENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

BORON; CARBON; MOLYBDENUM; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; DIFFUSION; HEAT; METHODOLOGY; OPTICS; SPECTROMETRY; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BORON; CARBON; CRYSTALLIZATION; DIFFUSION; HOT TEMPERATURE; MICROSCOPY, ELECTRON, TRANSMISSION; MOLYBDENUM; OPTICS AND PHOTONICS; SILICON; SPECTROMETRY, X-RAY EMISSION; SURFACE PROPERTIES; X-RAY DIFFRACTION;

EID: 60849132753     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.48.000155     Document Type: Article

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