Silicide formation by solid-state diffusion in MO/Si multilayer thin films

Journal of Materials Science

Volumn 31, Issue 13, 1996, Pages 3567-3572

  Chi, Eungjoon ^a   Shim, Jaeyeob ^a   Kwak, Joonseop ^a   Baik, Hongkoo ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL REACTIONS; DIFFERENTIAL SCANNING CALORIMETRY; DIFFUSION IN SOLIDS; FREE ENERGY; INTERFACIAL ENERGY; MAGNETRON SPUTTERING; NUCLEATION; PHASE TRANSITIONS; SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

AMORPHOUS PHASE; HEAT OF FORMATION; MULTILAYER THIN FILMS; SILICIDE FORMATION; SOLID STATE DIFFUSION;

MULTILAYERS;

EID: 0030188968     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00360763     Document Type: Article

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