n- and p-channel TaN/HfO2 MOSFETs on GaAs substrate using a germanium interfacial passivation layer

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 99-100

  Kim, Hyoung Sub ^a   Ok, Injo ^a   Zhu, Feng ^a   Zhang, M ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249091448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373668     Document Type: Conference Paper

References (4)

1. S. Tiwari et al., IEEE EDL, vol. 9, No. 9, pp. 488, (1988)
2. I. Ok et al., IEEE IEDM 2006, pp. 829, (2006)
3. H.-S. Kim et al., Appl. Phys. Lett., 88, pp. 252906, (2006)
4. H.-S. Kim et al, Appl. Phys. Lett., 89, pp. 222904, (2006)