Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 214-217

  Gao, Fei ^a,b   Lee, S J ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; INTERNET PROTOCOLS; MOS DEVICES; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPURIOUS SIGNAL NOISE; TANTALUM COMPOUNDS; TRANSISTORS;

ACTIVATION EFFICIENCIES; ALN; ALN FILMS; CO IMPLANTATIONS; ENHANCEMENT MODES; FIELD EFFECTS; FORWARD CURRENTS; GAAS; GATE ELECTRODES; HIGH QUALITIES; INTERFACE STATE DENSITIES; INVERSION CAPACITANCES; JUNCTION LEAKAGE CURRENTS; LOW-LEAKAGE CURRENTS; METAL-OXIDE SEMICONDUCTORS; MOSFETS; OUTPUT CHARACTERISTICS; PASSIVATION LAYERS; REVERSE BIAS; REVERSE CURRENTS; SOURCE/DRAIN JUNCTIONS; SURFACE PASSIVATIONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59949104633     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025909     Document Type: Article

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