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Journal of Alloys and Compounds

Volumn 509, Issue 3, 2011, Pages 571-577

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

(2) Gullu O a,b Turut A c

a BATMAN UNIVERSITY (Turkey)

b OSMANIYE KORKUT ATA UNIVERSITY (Turkey)

c ATATÜRK UNIVERSITY (Turkey)

Author keywords

Barrier height; DNA; Ideality factor; Metal semiconductor structures; Silicon

Indexed keywords

ACTIVATION CURRENTS; BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; FORWARD BIAS VOLTAGE; FORWARD VOLTAGE; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACE LAYER; METAL-SEMICONDUCTOR STRUCTURES; MIS DIODES; SCHOTTKY BARRIERS; SCHOTTKY DIODES; STANDARD ERRORS; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE; ZERO-BIAS;

BIAS VOLTAGE; ELECTRONIC PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78449253034 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.09.146 Document Type: Article

Times cited : (40)

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