Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts

Physica B: Condensed Matter

Volumn 403, Issue 1, 2008, Pages 131-138

  Aydin, M E ^a   Güllü, Ö ^b   Yildirim, N ^b  

^a DICLE UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Activation energy; Gaussian distribution; Schottky barrier height

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY BARRIERS; FIELD EMISSION; GAUSSIAN DISTRIBUTION; THERMIONIC EMISSION;

RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHT; STANDARD DEVIATION; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 36549076487     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.089     Document Type: Article

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