Voltage-temperature characteristics of W/n-GaAs Schottky diodes activated by the constant forward current: application as temperature sensors

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 1998, Pages 88-91

  Marcano, Nevel ^a   Singh, Amar ^a   Perez, Francisco ^a  

^a UNIVERSIDAD DE ORIENTE   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION;

BARRIER HEIGHT; CONSTANT ACTIVATION CURRENTS; CONSTANT FORWARD CURRENT; TEMPERATURE SENSORS; VOLTAGE TEMPERATURE CHARACTERISTICS;

SCHOTTKY BARRIER DIODES;

EID: 0031640909     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)