On the origin of intrinsic donors in ZnO

Applied Surface Science

Volumn 256, Issue 11, 2010, Pages 3390-3393

  Sun, F ^a,b   Shan, C X ^a   Wang, S P ^a,b   Li, B H ^a   Zhang, J Y ^a   Zhang, Z Z ^a   Zhao, D X ^a   Yao, B ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Carrier concentration; Hall measurement; Intrinsic donors; Zinc oxide

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; II-VI SEMICONDUCTORS; OXIDE FILMS; OXYGEN; ZINC OXIDE;

ANNEALING PROCESS; ELECTRON CONCENTRATION; GROWTH PROCESS; HALL MEASUREMENTS; IN-VACUUM; INTRINSIC DONORS; ORDERS OF MAGNITUDE; ZINC OXIDE (ZNO);

OXYGEN VACANCIES;

EID: 77649190427     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.12.040     Document Type: Article

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