High-speed etching of SiO2 using a remote-type pin-to-plate dielectric barrier discharge at atmospheric pressure

Journal of Physics D: Applied Physics

Volumn 43, Issue 42, 2010, Pages

  Oh, Jong Sik ^a   Park, Jae Beom ^b   Gil, Elly ^a   Yeom, Geun Young ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DENSITY; DIELECTRIC BARRIER DISCHARGES; ETCH RATES; HIGH SPEED; IN-LINE SYSTEMS; OPERATING FREQUENCY; POWER ELECTRODES; PULSE POWER; PULSE POWER SUPPLY;

ATMOSPHERIC PRESSURE; ELECTRIC DISCHARGES; ETCHING; FLOW CONTROL; FLUORINE; IONIZATION OF GASES; ORGANIC POLYMERS; SILICON COMPOUNDS;

DIELECTRIC DEVICES;

EID: 78249231994     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/42/425207     Document Type: Article

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