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Plasma Sources Science and Technology

Volumn 11, Issue 1, 2002, Pages 97-103

Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure

(4) Nowling, G R a Babayan, S E a Jankovic, V a Hicks, R F a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HEATING; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILANES; SILICON NITRIDE; SILICON WAFERS; STOICHIOMETRY; SUBSTRATES; TEMPERATURE;

GAS-PHASE REACTION; SILICON NITRIDE FILM; SUBSTRATE TEMPERATURE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0036465647 PISSN: 09630252 EISSN: None Source Type: Journal
DOI: 10.1088/0963-0252/11/1/312 Document Type: Article

Times cited : (86)

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