Plasma etch models based on different plasma chemistry for micro-electro-mechanical-systems application

Vacuum

Volumn 68, Issue 2, 2002, Pages 191-196

  Paul, A K ^a   Dimri, A K ^a   Bajpai, R P ^a  

^a CSIR CENTRAL SCIENTIFIC INSTRUMENTS ORGANISATION   (India)

Author keywords

Anisotropy; Etch rates; Etching; High aspect ratio etching; MEMS; Sidewall passivation

Indexed keywords

ANISOTROPY; ASPECT RATIO; CHLORINE; FLUORINE; LOW TEMPERATURE EFFECTS; PASSIVATION; PLASMA ETCHING; REACTIVE ION ETCHING; SILICA;

GAS CHOPPING TECHNIQUES;

MICROELECTROMECHANICAL DEVICES;

EID: 0037206624     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00387-1     Document Type: Article

References (22)

1. Peterson K.E. Proc IEEE. 70:1982;420.
2. Crepregi L. Microelectron Eng. 3:1985;221.
3. Ephrath L.M. IEEE Trans Electron Devices. ED 28:1981;1319.
4. Kendall D.L. J Vac Sci Technol. A8:1990;3598.
5. Willams K.R., Muller R.S. Journal of Microelectromechanical Systems. 5(4):1996;256.
6. Jansen, Gardeniers, Boer MDC, Elwenspock M, Fluitman Jr J. Micromech Microeng 1996;6:14.
7. Paul AK, Dimri AK, Banerjie PC. In: Ghosh PK, editor. Proceedings of the National Symposium on Plasma Science. India: Prentice-Hall, 1996. p. 58.
8. Esashi M., Takinaini M., Wakabayashi Y., Minami K. Micromech Microeng. 5:1995;5.
9. Furiya A, Shimokawa F, Matsuura T, Sawada R. Proceedings of the IEEE MEMS '93, Cat. no. 93CH3265-6. New York: IEEE, 1993. p. 59.
10. Dahn G., Rangelow I.W., Hudek P., Koops H.W.P. Microelectron Eng. 27:1995;263.
11. Gottscho R.A., Jurgensen C.W. J Vac Sci Technol. B10:1992;2133.
12. Coburn J.W., Winters H.F. Appl Phys Lett. 55:1989;2730.
13. Mogab C.J. Electrochem Soc. 124:1977;1263.
14. Ingram S.G. J Appl Phys. 68:1990;500.
15. Rangelow I.W., Kassing R. Proc Plasma Surface Eng. 1:1988;473.
16. Paul A.K., Sodhi K., Dimri A.K., Banerjie P.C., Bajpai R.P. IETE Tech Rev. 15:1998;49.
17. Lehman H.W., Widmer R. J Vac Sci Technol. 15:1978;319.
18. Paul A.K., Dimri A.K., Mohan S. Proc SPIE. 3903:1999;2.
19. Tachi S., Tsujimoto K., Arai S., Kure T. J Vac Sci Technol. A9:1991;796.
20. Wolfe J.C., Sen S., Pendharkar S.V., Mauger P., Shimbunas A.R. J Vac Sci Technol. B10:1992;2716.
21. Oehrlein G.S., Rembetshi J.F., Payne E.H. J Vac Sci Technol. B8:1990;1199.
22. Paul A.K., Rangelow I.W. Microelectron Eng. 35:1997;79.