High-speed etching of amorphous silicon using pin-to-plate dielectric barrier discharge

Surface and Coatings Technology

Volumn 202, Issue 4-7, 2007, Pages 1204-1207

  Kyung, Se Jin ^a   Park, Jae Beom ^a   Lee, Yong Hyuk ^b   Lee, June Hee ^a   Yeom, Geun Young ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

a:Si etching; Atmospheric pressure plasma; Dielectric barrier discharge

Indexed keywords

AMORPHOUS SILICON; ELECTRIC DISCHARGES; ELECTRODES;

ATMOSPHERIC PRESSURE PLASMA; DIELECTRIC BARRIER DISCHARGE; ETCH RATE;

PLASMA ETCHING;

AMORPHOUS SILICON; ELECTRIC DISCHARGES; ELECTRODES; PLASMA ETCHING;

EID: 36148983835     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.05.083     Document Type: Article

References (13)

1. Schmitt J., Elyaakoubi M., and Sansonnens L. Plasma Sources Sci. Technol. 11 (2002) A206
2. Lee Y.H., Yi C.H., Chung M.J., and Yeom G.Y. Surf. Coat. Technol. 146 (2001) 474
3. Kyung S.J., Park J.B., Maksym V., Lee J.H., and Yeom G.Y. Carbon 45 3 (2007) 629
4. Kanazawa S., Kogoma M., Moriwaki T., and Okazaki S. J. Phys. D: Appl. Phys. 21 (1988) 838
5. Kyung S.J., Lee Y.H., Kim C.W., Lee J.H., and Yeom G.Y. Carbon 44 8 (2006) 1530
6. Yi C.H., Lee Y.H., and Yeom G.Y. Surf. Coat. Technol. 171 (2003) 237
7. Simor M., Rahel J., Vojtek P., and Cernak M. Appl. Phys. Lett. 81 (2002) 2716
8. Golubovskii Y.B., Maiorov V.A., Behnke J., and Behnke J.F. J. Phys. D: Appl. Phys. 35 (2002) 751
9. Massines F., Segur P., Gherardi N., Khamphan C., and Richard A. Surf. Coat. Technol. 174 (2003) 8
10. Yamakawa K., Hori M., Goto T., Den S., Katagiri T., and Kano H. Appl. Phys. Lett. 85 4 (2004) 549
11. Yamakawa K., Hori M., Goto T., Den S., Katagiri T., and Kano H. J. Appl. Phys. 98 (2005) 043311
12. Lee Y.H., Kyung S.J., Jeong C.H., and Yeom G.Y. Jpn. J. Appl. Phys. 44 2 (2005) 78
13. Koike K., Fukuda T., Fujikawa S., and Saeda M. Jpn. J. Appl. Phys. 36 (1997) 5724