Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Magalhaes S ^a,b   Peres, M ^b   Fellmann, V ^c   Daudin, B ^c   Neves, A J ^b   Alves, E ^a,d   Monteiro, T ^b   Lorenz, K ^a,d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c CEA GRENOBLE   (France)

^d CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CATION SITES; DAMAGE LEVEL; EUROPIUM IONS; FLUENCES; GAN EPILAYERS; GAN QUANTUM DOTS; IMPLANTATION DAMAGE; IMPLANTATION FLUENCE; OPTICAL ACTIVATION; QUANTUM DOT SUPERLATTICES; SELF-ASSEMBLED; SPACER LAYER; THERMAL-ANNEALING;

ANNEALING; EUROPIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; SUPERLATTICES; THERMAL EXPANSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78149443374     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3496624     Document Type: Article

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