Visualization of Tm dopant atoms diffused out of GaN quantum dots

Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

  Okuno, H ^a   Rouvire J L ^a   Jouneau, P H ^a   Bayle Guillemaud, P ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN BARRIERS; ALN LAYERS; ATOMIC COLUMNS; CAPPING MECHANISM; DEFOCUS; DIRECT VISUALIZATION; GAN QUANTUM DOTS; HIGH-ANGLE ANNULAR DARK-FIELD IMAGING; REDUCED SENSITIVITY; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SIMULATED IMAGES; TM DOPANT;

DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; VISIBILITY; VISUALIZATION;

ATOMS;

EID: 77954081556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455893     Document Type: Article

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