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Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes

(6) Wang, Q a Wang, T a Bai, J a Cullis, A G a Parbrook, P J a Ranalli, F a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVES; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; MICROSCOPIC EXAMINATION; OPTICAL MATERIALS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM;

ANNEALING TEMPERATURE;

ANNEALING;

EID: 51349166575 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2976324 Document Type: Article

Times cited : (25)

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