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Volumn 10, Issue 4, 2010, Pages 2473-2478

Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/ Aluminium Nitride Superlattice

Author keywords

GaN; Ion implantation; PL; PLE; Quantum dots; Rare earths; RBS

Indexed keywords

AIN BUFFER; ALUMINIUM NITRIDE SUPERLATTICES; CATION SITES; CRYSTAL QUALITIES; EU-DOPED GAN; GAN QUANTUM DOTS; GAN/AIN; PHOTON ENERGY EXCITATION; PL; QUANTUM DOT; RARE EARTH IONS; SAMPLE TEMPERATURE; SPACER LAYER; THERMAL QUENCHING; THERMAL-ANNEALING;

EID: 77954983515     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1430     Document Type: Conference Paper
Times cited : (4)

References (22)
  • 12
    • 84857899019 scopus 로고    scopus 로고
    • S. Magalhães, K. Lorenz, N. Franco, N. P. Barradas, E. Alves, B. Amstatt, B. Daudin, to be published.
    • S. Magalhães, K. Lorenz, N. Franco, N. P. Barradas, E. Alves, B. Amstatt, and B. Daudin, to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.