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Journal of Applied Physics

Volumn 107, Issue 2, 2010, Pages

Optical doping and damage formation in AlN by Eu implantation

(7) Lorenz, K a,b Alves, E a,b Gloux, F c Ruterana, P c Peres, M d Neves, A J d Monteiro, T d

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

c UNIVERSITÉ DE CAEN (France)

d UNIVERSITY OF AVEIRO (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; AMORPHOUS LAYER; DAMAGE FORMATION; DAMAGE LEVEL; DIFFERENT GEOMETRY; FLUENCE RANGE; FLUENCES; HIGH TEMPERATURE; IMPLANTATION DAMAGE; ION CHANNELING EFFECTS; LOW DAMAGES; ROOM TEMPERATURE; SURFACE NORMALS;

IONS; SEMICONDUCTOR QUANTUM WELLS;

EUROPIUM;

EID: 75749129925 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3291100 Document Type: Article

Times cited : (43)

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