Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots

Physica Status Solidi (B) Basic Research

Volumn 247, Issue 7, 2010, Pages 1675-1678

  Peres, M ^a   Neves, A J ^a   Monteiro, T ^a   Magalhaes S ^a,b   Alves, E ^b   Lorenz, K ^b   Okuno Vila, H ^c   Fellmann, V ^c   Bougerol, C ^c   Daudin, B ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c CEA GRENOBLE   (France)

Author keywords

III V Semiconductors; Molecular beam epitaxy; Optical properties; Quantum dots

Indexed keywords

EID: 77954610677     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983674     Document Type: Article

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