Electromigration-induced plastic deformation in Cu interconnects: Effects on current density exponent, n, and implications for em reliability assessment

Journal of Electronic Materials

Volumn 39, Issue 11, 2010, Pages 2483-2488

  Budiman, A S ^a,c   Hau Riege, C S ^b   Baek, W C ^c   Lor, C ^c   Huang, A ^c   Kim, H S ^c   Neubauer, G ^c   Pak, J ^c   Besser, P R ^d   Nix, W D ^e  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b QUALCOMM INC   (United States)

^c Submicron Development Center   (United States)

^d Unity Semiconductor ^*  (United States)

^e Stanford University   (United States)

Author keywords

Current density exponent; Electromigration; Plasticity

Indexed keywords

BLACK'S EQUATION; CU-INTERCONNECTS; ELECTROTRANSPORT; HIGH TEMPERATURE; MEDIAN TIME TO FAILURES; RELIABILITY ASSESSMENTS;

CURRENT DENSITY; PLASTICITY; RELIABILITY ANALYSIS;

ELECTROMIGRATION;

EID: 78149282848     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1356-4     Document Type: Article

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