Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 59-62

  Wu, W ^a   Kang, S H ^b   Yuan, J S ^a   Oates, A S ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; COPPER; CURRENT DENSITY; ELECTROMIGRATION; FINITE ELEMENT METHOD; SEMICONDUCTOR DEVICE MODELS; SILICA; THERMAL CONDUCTIVITY OF SOLIDS;

MEDIAN-TIME-TO-FAILURE (MTTF);

INTERCONNECTION NETWORKS;

EID: 0035151968     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00200-8     Document Type: Article

References (11)

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8. Wu W, Yuan JS, Kang SH, Oates AS. Interconnect electromigration lifetime under pulsed DC stress and Joule heating, unpublished data.
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11. Glickman E., Nathan M. On the unusual electromigration behavior of copper interconnects. J Appl Phys. 80:1996;3782.