GaN metal-semiconductor-metal photodetectoi with SiN/GaN nucleation layer

IEEE Sensors Journal

Volumn 8, Issue 10, 2008, Pages 1693-1697

  Su, Y K ^a,b   Chang, S J ^a,b   Jhou, Y D ^a,b   Wu, S L ^c   Liu, C H ^b  

^a Institute of Microelectronics   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Buffer layer; Metal semiconductor metal (MSM) barrier; Ni Au; Photodetector; SiN

Indexed keywords

BIAS-DEPENDENT PHOTOCURRENTS; DETECTIVITY; GAN METAL-SEMICONDUCTOR-METAL; LOW TEMPERATURES; METAL-SEMICONDUCTOR-METAL (MSM) BARRIER; MSM PHOTODETECTOR; NI/AU; NOISE EQUIVALENT POWER; NUCLEATION LAYERS; PHOTORESPONSES; SIN; SPECTRAL RESPONSE;

BUFFER LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; NUCLEATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON NITRIDE;

METALS;

EID: 78149246035     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2008.2003308     Document Type: Article

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