Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability

IEEE Photonics Technology Letters

Volumn 19, Issue 10, 2007, Pages 717-719

  Horng, J J ^a   Su, Y K ^a   Chang, S J ^a   Ko, T K ^a   Shei, S C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN; Electrostatic discharge (ESD); Protection chip; Sensor module; Ultraviolet (UV)

Indexed keywords

ELECTROSTATIC DISCHARGE; MULTICHIP MODULES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON SENSORS; ULTRAVIOLET DEVICES;

HUMAN-BODY-MODE (HBM); PROTECTION CHIP; SENSOR MODULE;

SCHOTTKY BARRIER DIODES;

EID: 34247228012     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.895056     Document Type: Article

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