SCOPUS 정보 검색 플랫폼

Volumn 189-190, Issue , 1998, Pages 270-274

Epitaxial growth of GaN layers with double-buffer layers

Author keywords

Double buffer layers; GaN; MOVPE; PL; Raman

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DOUBLE BUFFER LAYERS (DBL);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090756 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00257-7 Document Type: Article

Times cited : (15)

References (14)

1
- 0023040588
- H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

2
- 0026244249
- S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
- (1991) Jpn. J. Appl. Phys. , vol.30
- Nakamura, S.¹

3
- 0029389357
- S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34 (1995) L1332.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴ Yamada, T.⁵ Mukai, T.⁶

4
- 0030704057
- K. Nishida, S. Haneda, K. Hara, H. Munekata, H. Kukimoto, J. Crystal Growth 170 (1997) 312.
- (1997) J. Crystal Growth , vol.170 , pp. 312
- Nishida, K.¹ Haneda, S.² Hara, K.³ Munekata, H.⁴ Kukimoto, H.⁵

5
- 0031548440
- K. Nishida, K. Uchida, M. Kondo, H. Kukimoto, H. Munekata, Appl. Surf. Sci. 117/118 (1997) 530.
- (1997) Appl. Surf. Sci. , vol.117-118 , pp. 530
- Nishida, K.¹ Uchida, K.² Kondo, M.³ Kukimoto, H.⁴ Munekata, H.⁵

6
- 0000326438
- K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, J. Appl. Phys. 79 (1996) 3487; 80 (1996) 1942.
- (1996) J. Appl. Phys. , vol.79 , pp. 3487
- Uchida, K.¹ Watanabe, A.² Yano, F.³ Kouguchi, M.⁴ Tanaka, T.⁵ Minagawa, S.⁶

7
- 0000326438
- K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, J. Appl. Phys. 79 (1996) 3487; 80 (1996) 1942.
- (1996) J. Appl. Phys. , vol.80 , pp. 1942

8
- 0031079473
- K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, Solid State Electron. 41 (1997) 135.
- (1997) Solid State Electron. , vol.41 , pp. 135
- Uchida, K.¹ Watanabe, A.² Yano, F.³ Kouguchi, M.⁴ Tanaka, T.⁵ Minagawa, S.⁶

9
- 0001016926
- D. Behr, R. Niebuhr, J. Wagner, K.-H. Bachem, U. Kaufmann, Appl. Phys. Lett. 70 (1997) 363.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 363
- Behr, D.¹ Niebuhr, R.² Wagner, J.³ Bachem, K.-H.⁴ Kaufmann, U.⁵

10
- 0030087417
- W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, M. Stuzmann, Appl. Phys. Lett. 68 (1996) 970.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 970
- Rieger, W.¹ Metzger, T.² Angerer, H.³ Dimitrov, R.⁴ Ambacher, O.⁵ Stuzmann, M.⁶

11
- 0001266347
- F.A. Ponce, J.W. Steeds, C.D. Dyer, G.D. Pitt, Appl. Phys. Lett. 69 (1996) 2650.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2650
- Ponce, F.A.¹ Steeds, J.W.² Dyer, C.D.³ Pitt, G.D.⁴

12
- 0030565188
- O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann, J. Crystal Growth 167 (1996) 1.
- (1996) J. Crystal Growth , vol.167 , pp. 1
- Ambacher, O.¹ Dimitrov, R.² Lentz, D.³ Metzger, T.⁴ Rieger, W.⁵ Stutzmann, M.⁶

13
- 0001614736
- D.A. Turnbull, X. Li, S.Q. Gu, E.E. Retur, J.J. Coleman, S.G. Bishop, J. Appl. Phys. 80 (1996) 4609.
- (1996) J. Appl. Phys. , vol.80 , pp. 4609
- Turnbull, D.A.¹ Li, X.² Gu, S.Q.³ Retur, E.E.⁴ Coleman, J.J.⁵ Bishop, S.G.⁶

14
- 0342840996
- T. Kozawa, T. Kachi, H. Kano, H. Nagase, J. Appl. Phys. 77 (1995) 4389.
- (1995) J. Appl. Phys. , vol.77 , pp. 4389
- Kozawa, T.¹ Kachi, T.² Kano, H.³ Nagase, H.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.