Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3706-3710

  Leung, B H ^a   Fong, W K ^a   Zhu, C F ^a   Surya, Charles ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER NUMBERS; CORRELATED FLUCTUATIONS; CROSS-BRIDGE; DE-TRAPPING; EXCESS NOISE; EXPERIMENTAL DATA; GAN THIN FILMS; GROWTH OF GAN; INTERMEDIATE TEMPERATURES; LOW FREQUENCY; LOW-FREQUENCY NOISE; NUMBER FLUCTUATIONS; NUMERICAL EVALUATIONS; OPTIMAL THICKNESS; RF PLASMA; SCATTERING RATES; THERMALLY ACTIVATED; TRAP DENSITY; VOLTAGE NOISE;

COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR BEAMS; THIN FILMS;

GALLIUM NITRIDE;

EID: 0037087270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436288     Document Type: Article

References (31)

1. K. S. Kim, A. Saxler, P. Kung, M. Razeghi, and K. Y. Lim, Appl. Phys. Lett. 71, 800 (1997).
2. K. G. Fertitta, A. L. Holmes, J. G. Neff, F. J. Ciuba, and R. D. Dupuis, Appl. Phys. Lett. 65, 1823 (1994).
3. O. Aktas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, IEEE Electron Device Lett. 18, 293 (1997).
4. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997).
5. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000).
6. H. Tang and J. B. Webb, Appl. Phys. Lett. 74, 2373 (1999).
7. S. Zamir, B. Meyler, E. Zolotoyabko, and J. Salzman, J. Cryst. Growth 218, 181 (2000).
8. M. Sasaki, T. Nakayama, N. Shimoyama, T. Suemasu, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 39, 4869 (2000).
9. K. Lorenz, M. Gonsalves, Wook Kim, V. Narayanan, and S. Mahajan, Appl. Phys. Lett. 77, 3391 (2000).
10. H. Z. Xu, Z. G. Wang, M. Kawabe, I. Harrison, B. J. Ansell, and C. T. Foxon, J. Cryst. Growth 218, 1 (2000).
11. M. Misra, D. Doppalapudi, A. V. Sampath, and T. D. Moustakas, MRS Internet J. Nitride Semicond. Res. 4S1, G7.8 (1999).
12. Z. C. Huang, J. C. Chan, and Dennis Wickenden, J. Cryst. Growth 170, 362 (1997).
13. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, J. Appl. Phys. 83, 2142 (1998).
14. C. F. Zhu, W. K. Fong, B. H. Leung, C. C. Cheng, and Charles Surya, IEEE Trans. Electron Devices 48, 1225 (2001).
15. W. K. Fong, C. F. Zhu, B. H. Leung, and C. Surya, MRS Internet J. Nitride Semicond. Res. 5, 12 (2000).
16. B. K. Jones, IEEE Trans. Electron Devices 41, 2188 (1994).
17. L. K. J. Vandamme, IEEE Trans. Electron Devices 41, 2176 (1994).
18. B. H. Leung, W. K. Fong, C. F. Zhu, and C. Surya, (unpublished).
19. S. H. Ng, C. Surya, E. R. Brown, and P. A. Maki, Appl. Phys. Lett. 62, 2262 (1993).
20. S. H. Ng and C. Surya, J. Appl. Phys. 73, 7504 (1993).
21. S. Machlup, J. Appl. Phys. 25, 341 (1954).
22. G. Bosman and R. J. J. Zijlstra, Solid-State Electron. 25, 273 (1982).
23. F. C. Hou, G. Bosman, and M. E. Law, Microelectron. Reliab. 40, 1883 (2000).
24. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479 (1981).
25. P. Nichols, C. M. Van Vliet, and S. Mergui, J. Cryst. Growth 197, 547 (1999).
26. C. M. Van Vliet, IEEE Trans. Electron Devices 41, 1902 (1994).
27. L. K. J. Vandamme, X. Li, and D. Rigand, IEEE Trans. Electron Devices 41, 1936 (1994).
28. S. S. Li, Semiconductor Physical Electronics (Plenum, New York, 1993), pp. 189-192.
29. C. Surya and T. Y. Hsiang, Phys. Rev. B 35, 6343 (1987).
30. F. N. Hooge, IEEE Trans. Electron Devices 41, 1926 (1994).
31. C. F. Zhu, W. K. Fong, B. H. Leung, and C. Surya, Appl. Phys. A: Mater. Sci. Process. 72, 495 (2001).