Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010)

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2857-2863

  Oehme, Michael ^a   Šarlija, Marko ^a   Hähnel, Daniel ^a   Kaschel, Mathias ^a   Werner, Jens ^a   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Molecular beam epitaxy (MBE); negative differential resistance (NDR); silicon; tunnel diodes

Indexed keywords

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DIFFUSION CURRENTS; FORWARD CURRENTS; HIGH POTENTIAL; INTERBAND TUNNELING; LOW TEMPERATURES; MAXIMUM PEAKS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK TO VALLEY CURRENT RATIO; POSTGROWTH ANNEALING; ROOM TEMPERATURE; TEMPERATURE STUDY; TUNNELING DIODES;

CURRENT DENSITY; DEFECT DENSITY; DIODES; EPITAXIAL GROWTH; LANDFORMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEGATIVE RESISTANCE; SILICON; SUPERCONDUCTING MATERIALS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78049296004     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2068395     Document Type: Article

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