Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 228-232

  Bauer, M ^a   Oehme, M ^a   Sauter, M ^a   Eifler, G ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; FILM GROWTH; INTERFACES (MATERIALS); INTERFEROMETRY; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX;

REFLECTION SUPPORTED PYROMETRIC INTERFEROMETRY; SOLID PHASE EPITAXY; TIME RESOLVED REFLECTIVITY MEASUREMENTS;

AMORPHOUS FILMS;

EID: 0033905895     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00934-7     Document Type: Article

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