Excess current investigations of silicon p+-i-n+ diodes

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1294-1296

  Reitemann, G ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BUILT-IN VOLTAGE; CURRENT CHARACTERISTIC; EPITAXIALLY GROWN; EXCESS CURRENT; REFERENCE VOLTAGES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; VOLTAGE DEPENDENCE;

SUPERCONDUCTING MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956038588     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1450048     Document Type: Article

References (7)

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