RF performance and modeling of Si/SiGe resonant interband tunneling diodes

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2129-2135

  Jin, Niu ^a,b,c   Chung, Sung Yong ^a,b   Yu, Ronghua ^e   Di Giacomo, Sandro J ^a,b   Berger, Paul R ^a,b   Thompson, Phillip E ^a,d  

^a IEEE   (United States)

^b Ohio State University   (United States)

^c University of Illinois at Urbana Champaign   (United States)

^d OHIO STATE UNIVERSITY   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Modeling; Molecular beam epitaxial (MBE) growth; RF performance; Si SiGe heterojunction; Tunnel diodes

Indexed keywords

ADVANCED DESIGN SYSTEM (ADS); NEGATIVE DIFFERENTIAL RESISTANCE (NDR); PEAK-TO-VALLEY CURRENT RATIO (PVCR); RESONANT INTERBAND TUNNELING DIODES (RITD);

CAPACITANCE; COMPUTER SOFTWARE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SILICON COMPOUNDS;

TUNNEL DIODES;

EID: 33646266764     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856183     Document Type: Article

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