SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

Antimony doped Si Esaki diodes without post growth annealing

(6) Oehme, M a Kirfel, O a Werner, J a Kaschel, M a Kasper, E a Schulze, J a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

Esaki diodes; Molecular beam epitaxy; Silicon; Surface segregation

Indexed keywords

ESAKI DIODE; ESAKI DIODES; INTEGRATED DEVICE; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; POSTGROWTH ANNEALING; ROOM TEMPERATURE; SILICON SURFACES; VOLTAGE CHARACTERISTICS;

ANTIMONY; BORON; CRYSTAL GROWTH; DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SURFACE SEGREGATION; TUNNEL DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 73649121280 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.057 Document Type: Article

Times cited : (8)

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