Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

  Seifarth, O ^a   Dietrich, B ^a   Zaumseil, P ^a   Giussani, A ^a   Storck, P ^b   Schroeder, T ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL DEPOSITION; EXPERIMENTAL DATA; GLOBAL INTEGRATION; HETEROEPITAXY; LATTICE-MISMATCHED; LAYER TRANSFER; MISFIT DISLOCATIONS; MULTILAYER MODELS; OXIDE HETEROSTRUCTURES; SCALE DOWN; SI (1 1 1); SI-BASED; SILICON THIN FILM; SINGLE-CRYSTALLINE; STRAINED-SI; SUPPORT SYSTEMS; THEORETICAL STUDY;

CRYSTALLINE MATERIALS; CRYSTALS; DEPOSITION; EPITAXIAL GROWTH; FILM PREPARATION; HETEROJUNCTIONS; OXIDE FILMS; SILICON; SILICON WAFERS; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958188451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3486217     Document Type: Article

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