Substitutional carbon incorporation during Si1-x-yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon

Applied Physics Letters

Volumn 76, Issue 24, 2000, Pages 3546-3548

  Liu, J P ^a   Osten, H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008052013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126702     Document Type: Article

References (12)

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