Twin formation during the growth of InP on SrTiO3

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Cheng, J ^a   Largeau, L ^b   Patriarche, G ^b   Regreny, P ^a   Hollinger, G ^a   Saint Girons, G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL SYSTEMS; HETERO INTERFACES; INP; INTERFACE ENERGY; THREE-DIMENSIONAL GROWTH; TWIN FORMATION;

SEMICONDUCTOR GROWTH;

EPITAXIAL GROWTH;

EID: 67649130369     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151826     Document Type: Article

References (23)

1. D. G. Deppe, N. Holonyak, Jr., D. W. Nam, K. C. Hsieh, G. S. Jackson, R. J. Matyi, H. Shichijo, J. E. Epler, and H. F. Chung, Appl. Phys. Lett. 0003-6951 51, 637 (1987). 10.1063/1.98371
2. S. M. Ting and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 87, 2618 (2000). 10.1063/1.372227
3. Y. Chriqui, L. Largeau, G. Patriarche, G. Saint-Girons, S. Bouchoule, D. Bensahel, Y. Campidelli, O. Kermarec, and I. Sagnes, J. Cryst. Growth 0022-0248 265, 53 (2004). 10.1016/j.jcrysgro.2004.01.038
4. M. E. Groenert, C. W. Leitz, A. J. Pitura, V. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 93, 362 (2003). 10.1063/1.1525865
5. J. Bai, J. -S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld, and M. Dudley, Appl. Phys. Lett. 0003-6951 90, 101902 (2007). 10.1063/1.2711276
6. M. Kostrzewa, G. Grenet, P. Regreny, J. L. Leclercq, P. Perreau, E. Jalaguier, L. DiCioccio, and G. Hollinger, J. Cryst. Growth 0022-0248 275, 157 (2005). 10.1016/j.jcrysgro.2004.10.080
7. O. Marty, T. Nychyporuk, J. de la Torre, V. Lysenko, G. Bremond, and D. Barbier, Appl. Phys. Lett. 0003-6951 88, 101909 (2006). 10.1063/1.2179620
8. Y. H. Lo, Appl. Phys. Lett. 0003-6951 59, 2311 (1991). 10.1063/1.106053
9. S. Rohart, G. Grenet, and C. Priester, Appl. Surf. Sci. 0169-4332 188, 193 (2002). 10.1016/S0169-4332(01)00745-0
10. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 0031-9007 81, 3014 (1998). 10.1103/PhysRevLett.81.3014
11. G. Delhaye, C. Merckling, M. El-Kazzi, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger, L. Largeau, and G. Patriarche, J. Appl. Phys. 0021-8979 100, 124109 (2006). 10.1063/1.2407273
12. G. J. Norga, C. Marchiori, C. Rossel, A. Guiller, J. P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, J. W. Seo, and Ch. Dieker, J. Appl. Phys. 0021-8979 99, 084102 (2006). 10.1063/1.2190078
13. K. Eisenbeiser, R. Emrick, R. Droopad, Z. Yu, J. Finder, S. Rockwell, J. Holmes, C. Overgaard, and W. Ooms, IEEE Electron Device Lett. 0741-3106 23, 300 (2002). 10.1109/LED.2002.1004215
14. D. C. Jordan, R. Droopad, Z. Yu, and C. Overgaard, US2002/0163024A1.
15. Z. Yu, R. Droopad, and W. J. Ooms, US2002/0153524A1.
16. G. Saint-Girons, C. Priester, P. Regreny, G. Patriarche, L. Largeau, V. Favre-Nicolin, G. Xu, Y. Robach, M. Gendry, and G. Hollinger, Appl. Phys. Lett. 0003-6951 92, 241907 (2008). 10.1063/1.2944140
17. G. Saint-Girons, P. Regreny, L. Largeau, G. Patriarche, and G. Hollinger, Appl. Phys. Lett. 0003-6951 91, 241912 (2007). 10.1063/1.2824466
18. G. Saint-Girons, J. Cheng, P. Regreny, L. Largeau, G. Patriarche, and G. Hollinger, Phys. Rev. B 0163-1829 (unpublished).
19. L. Largeau, D. L. Dheeraj, M. Tchernycheva, G. E. Cirlin, and J. -C. Harmand, Nanotechnology 0957-4484 19, 155704 (2008). 10.1088/0957-4484/19/15/ 155704
20. J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, K. Naji, G. Hollinger, and G. Saint-Girons, J. Cryst. Growth 0022-0248 311, 1042 (2009). 10.1016/j.jcrysgro.2008.12.014
21. G. Saint-Girons, J. Cheng, P. Regreny, L. Largeau, G. Patriarche, M. Gendry, and G. Hollinger, Phys. Rev. B 0163-1829 (unpublished).
22. C. Guerret-Pícourt, C. Fontaine, and A. Ponchet, J. Cryst. Growth 0022-0248 201, 178 (1999). 10.1016/S0022-0248(98)01313-X
23. J. Johansson, L. S. Karlsson, K. A. Dick, J. Bolinsson, B. A. Wacaser, K. Deppert, and L. Samuelson, J. Cryst. Growth 0022-0248 310, 5102 (2008). 10.1016/j.jcrysgro.2008.08.003