The effect of recovery on NBTI characterization of thick non-nitrided oxides

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 1-6

  Reisinger, H ^a   Vollertsen, R P ^a   Wagner, P J ^b   Huttner, T ^a   Martin, A ^a   Aresu, S ^a   Gustin, W ^a   Grasser, T ^b   Schlnder C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

RECOVERY; STRESSES;

FAST MEASUREMENT; MEASUREMENT DELAYS; MEASUREMENT METHODS; NITRIDED; NITRIDED OXIDES; STRESS FIELD; STRESS TIME; STRESS-TIME CURVES; THICK OXIDES; THRESHOLD SHIFTS;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 64549115339     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796074     Document Type: Conference Paper

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