Determination of the hydrogen concentration of silicon nitride layers by Fourier transform infrared spectroscopy

Infrared Physics and Technology

Volumn 38, Issue 4, 1997, Pages 223-226

  Jonak Auer, I ^a   Meisels, R ^a   Kuchar, F ^a  

^a UNIVERSITY OF LEOBEN   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; HYDROGEN; PLASMA APPLICATIONS; SILICON NITRIDE; THERMAL EFFECTS;

AMORPHOUS SILICON NITRIDE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

FOURIER TRANSFORM INFRARED SPECTROSCOPY;

EID: 0031170618     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(97)00011-X     Document Type: Article

References (5)

1. T.L. Chu, J. Vac. Sci. Technol. 6 (1970) 25.
2. C.R.M. Grovenor, Microelectronic Materials, IOP Publishing Ltd., 1989, ISBN 0-85274-270-3.
3. M. Ino, N. Inoue, M. Yoshimaru, IEEE Trans. Electron Dev. 41 (1994) 703.
4. W.A. Lanford, M.J. Rand, J. Electrochem. Soc. 49 (1978) 2473.
5. W.R. Knolle, Report AT&T Bell Laboratories, Reading, PA 19607, unpublished.