Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1355-1359

  Nelhiebel, M ^a   Wissenwasser, J ^a,b   Detzel, Th ^a   Timmerer, A ^a   Bertagnolli, E ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DMOS; TRANSFER CHARACTERISTICS; TRAP DENSITY;

ANNEALING; HYDROGEN; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SILICON NITRIDE;

METALLIZING;

EID: 24144494236     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.020     Document Type: Conference Paper

References (14)

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