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Volumn , Issue , 2008, Pages

Influence of hydrogen annealing on NBTI performance

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF HYDROGEN; ELECTRICAL TESTING; EMBEDDED FLASH; HYDROGEN ANNEALING; INTERNATIONAL SYMPOSIUM; NEGATIVE BIAS- TEMPERATURE-INSTABILITY;

EID: 51949116666     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2008.4588187     Document Type: Conference Paper
Times cited : (2)

References (13)
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  • 2
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  • 3
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    • J. M. Soon, K. P. Loh, S. S. tan, T. P. Chen, W. Y. Teo, and L.Chan, "Study of Negative-Bias Temperature instability induced defects Using First-principle Approach," Appl. Phys. Lett., vol. 83 (15), pp. 3063-3065, October 2003.
  • 4
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    • Interface Defects Responsible for Negative-bias Temperature Instability in Plasma-nitride SiON/Si (1000) Systems
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    • Fujieda, S.1    Mura, Y.2    Saitoh, M.3    Hasegawa, E.4    Koyama, S.5    Ando, K.6    Hasegawa, E.7    Koyama, S.8    Ando, K.9
  • 5
    • 3042607843 scopus 로고    scopus 로고
    • Hole Trapping Effect on Methodology for DC and AC negative Bias Temperature Instability Measurements in pMOS Transistors
    • April
    • V. Huard, and M. Denais, "Hole Trapping Effect on Methodology for DC and AC negative Bias Temperature Instability Measurements in pMOS Transistors," in Proc. Int. Reliab. Phys. Symp., pp. 40-45, April 2004.
    • (2004) Proc. Int. Reliab. Phys. Symp , pp. 40-45
    • Huard, V.1    Denais, M.2
  • 7
    • 0035397517 scopus 로고    scopus 로고
    • The Effect of Fluorine on Parametrics and Reliability in a 0.18μm 3.5/6.8 nm Dual Gate Oxide CMOS Technology
    • July
    • T. B. Hooek, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, "The Effect of Fluorine on Parametrics and Reliability in a 0.18μm 3.5/6.8 nm Dual Gate Oxide CMOS Technology," IEEE Trans. Elecctron Devices, vol. 48 (7), pp. 1346-1353, July 2001.
    • (2001) IEEE Trans. Elecctron Devices , vol.48 , Issue.7 , pp. 1346-1353
    • Hooek, T.B.1    Adler, E.2    Guarin, F.3    Lukaitis, J.4    Rovedo, N.5    Schruefer, K.6
  • 8
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    • 2/Si Interface on Reliability Issues - Negative bias temperature Instability and Fowler-Nordheim-stress Degradation
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.