CNTFET modeling and reconfigurable logic-circuit design

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 54, Issue 11 SPEC. ISS., 2007, Pages 2365-2379

  O'Connor, Ian ^a   Liu, Junchen ^a   Gaffiot, Frédéric ^a   Prégaldiny, Fabien ^b   Lallement, Christophe ^b   Maneux, Cristell ^c   Goguet, Johnny ^c   Frégonèse, Sebastien ^c   Zimmer, Thomas ^c   Anghel, Lorena ^d   Dang, Trong Trinh ^d   Leveugle, Régis ^d  

^a ECOLE CENTRALE DE LYON   (France)

^b Faculté de Médecine   (France)

^c UNIVERSITÉ BORDEAUX 1   (France)

^d TIMA LABORATORY   (France)

Author keywords

Carbon nanotube field effect transistor (CNTFET); Circuit simulation; Compact model; Reconfigurable logic gates

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBES; CIRCUIT SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; LOGIC DESIGN; LOGIC GATES; NANOELECTRONICS; NANOSENSORS; SCHOTTKY BARRIER DIODES; TIMING CIRCUITS;

AMBIPOLAR BEHAVIOR; CARBON NANO-TUBE FIELD EFFECT TRANSISTOR (CNTFET); COMPACT MODEL; DC CHARACTERISTICS; DESIGN TECHNOLOGIES; DEVICE CHARACTERISTICS; LOGIC CIRCUIT DESIGN; RECONFIGURABLE LOGIC;

RECONFIGURABLE HARDWARE;

EID: 49049102424     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2007.907835     Document Type: Article

References (29)

1. D. Rondoni and J. Hoekstra, "Towards models for CNT devices," in Proc. IEEE RISC'05, 2005, pp. 272-278.
2. J. Guo, S. Datta, and M. Lundstrom, "Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors," in Proc. IEDM'02, San Francisco, CA, 2002, pp. 711-715.
3. S. J. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbon-nanotube field-effect transistors," Phys. Rev. Lett., vol. 91, no. 5, pp. 058301-1-058301-4, Aug. 2003.
4. Y. Lin, J. Appenzeller, J. Knoch, and P. Avouris, "High-performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. Nanotechnol., vol. 4, no. 9, Sep. 2005.
5. A. Javey et al., "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano Lett. vol. 5, no. 2, pp. 345-348, 2005.
6. J. Appenzeller et al., "Comparing carbon nanotube transistors-the ideal choice: A novel tunneling device design," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2568-2576, Dec. 2005.
7. W. Hoenlein et al., "Carbon nanotubes for microelectronics: Status and future prospects," Mater. Sci. Eng. C23, pp. 663-669, 2003.
8. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, Nov. 2003.
9. R. Saito, M. S. Dresselhaus, and G. Dresselhaus, Physical Properties of Carbon Nanotubes. London, UK, U.K.: Imperial College Press, 1998.
10. A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit-compatible model of ballistic carbon nanotube field-effect transistors," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 23, no. 10, pp. 1411-1420, Oct. 2004.
11. S. Datta, Quantum Transport - Atom to Transistor. Cambridge, U.K.: Cambridge University Press, 2005.
12. H. Cazin d'Honincthun, S. Galdin-Retailleau, J. Sèe, and P. Dollfus, "Electron-phonon scattering and ballistic behavior in semiconducting carbon nanotubes," Appl. Phys. Lett., vol. 87, p. 172112, 2005.
13. V. N. Popov and L. Henrard, "Comparative study of the optical properties of single-walled carbon nanotubes within orthogonal and nonorthogonal tight-binding models," Phys. Rev. B, vol. 70, pp. 115;407-1-115407-12, 2004.
14. C. Enz, F. Krummenacher, and E. Vittoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications," J. AICSP, pp. 83-114, 1995.
15. C. Maneux, J. Goguet, S. Frégonèse, and T. Zimmer, "Analysis of CNTFET physical compact model," in Proc. IEEE Int. Conf. Design Test Integr. Syst. (DTIS) Nano.Technol., 2006, pp. 40-45.
16. F. Prégaldiny, C. Lallement, and J.-B. Kammerer, "Design-oriented compact models for CNTFETS," in Proc. IEEE Int. Conf. Design Test Integr. Syst. (DTIS) Nano.Technol., Tunis, 2006, pp. 34-39.
17. NANOHUB Online Simulations and More, CNT Bands, NANOHUB, Apr. 2006 [Online]. Available: http://www.nanohub.org
18. J. Knoch, S. Mantl, and J. Appenzeller, "Comparison of transport propoerties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts," Solid-State Electron., vol. 49, pp. 73-76, 2005.
19. J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172-177, Feb. 2004.
20. A. Hazeghi, T. Krishnamohan, and H.-S. P. Wong, "Schottky-barrier carbon nanotube field-effect transistor modeling," IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 439-445, Mar. 2007.
21. F. Prégaldiny, J.-B. Kammerer, and C. Lallement, "Compact modeling and applications of CNTFETS for analog and digital circuit design," in Proc. IEEE ICECS, Nice, France, Dec. 10-13, 2006, pp. 1030-1033.
22. A. Javey et al., "High-K dielectrics for advanced carbon nanotube transistors and logic gates," Nature Mater., vol. 1, pp. 241-246, 2002.
23. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, "Logic circuits with carbon nanotube transistors," Sci, vol. 294, no. 5545, pp. 1317-1320, Nov. 9, 2001.
24. R. Martel, V. Derycke, J. Appenzeller, S. Wind, and P. Avouris, "Carbon nanotube field-effect transistors and logic circuits," in Proc. 39th Design Autom. Conf., New Orleans, LA, Jun. 10-14, 2002, pp. 94-98.
25. Z. Chen, J. Appenzeller, Y.-M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Tang, S. J. Wind, P. M. Solomon, and P. Avouris, "An integrated logic circuit assembled on a single carbon nanotube," Sci, vol. 311, no. 5768, pp. 1735-11735, Mar. 24, 2006.
26. A. Raychowdhury and K. Roy, "Carbon-nanotube-based voltage-mode multiple-valued logic design," IEEE Trans. Nanotechnol., vol. 4, no. 2, pp. 168-179, Mar. 2005.
27. R. Sordan, K. Balasubramanian, M. Burghard, and K. Kern, "Exclusive-OR gate with a single carbon nanotube," Appl. Phys. Lett., vol. 88, p. 053119, 2006.
28. t carbon nanotube field-effect transistor for gigahertz range applications," IEEE Electron Dev. Lett., vol. 27, no. 8, pp. 681-683, Aug. 2006.
29. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, "Assessment of high-frequency performance potential for carbon nanotube transistors," IEEE Trans. Nanotechnology, vol. 4, no. 6, pp. 715-721, Nov. 2005.