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Volumn , Issue , 2008, Pages 573-578

Ballistic quantum transport in nano devices and circuits

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRONICS ENGINEERING; ELECTRONICS INDUSTRY; EXPLOSIVES; INTEGRATED CIRCUITS; NANOELECTRONICS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; QUANTUM THEORY;

EID: 52649172782     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2008.4585553     Document Type: Conference Paper
Times cited : (15)

References (10)
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    • Thornber, K.K.1
  • 2
    • 0022064896 scopus 로고
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    • Arora, V.K.1
  • 3
    • 34548483386 scopus 로고    scopus 로고
    • Ballistic Quantum Transport in a Nanoscale Metal-Oxide-Semiconductor Field Effect Transistor
    • Vijay K. Arora, Michael L. P. Tan, Ismail Saad, and Razali Ismail, "Ballistic Quantum Transport in a Nanoscale Metal-Oxide-Semiconductor Field Effect Transistor," Applied Physics. Letters, Vol. 91, pp. 103510-103513, 2007.
    • (2007) Applied Physics. Letters , vol.91 , pp. 103510-103513
    • Arora, V.K.1    Tan, M.L.P.2    Saad, I.3    Ismail, R.4
  • 4
    • 77956536830 scopus 로고    scopus 로고
    • Failure of Ohm's Law: Its Implications on the Design of Nanoelectronic Devices and Circuits
    • May 14-17, Belgrade, Serbia and Montenegro, pp
    • Vijay K. Arora, "Failure of Ohm's Law: Its Implications on the Design of Nanoelectronic Devices and Circuits," Proceedings of the IEEE International Conference on Microelectronics, May 14-17, 2006, Belgrade, Serbia and Montenegro, pp. 17-24.
    • (2006) Proceedings of the IEEE International Conference on Microelectronics , pp. 17-24
    • Arora, V.K.1
  • 5
    • 24844461245 scopus 로고
    • Role of quantum coherence in series resistors
    • M. Buttiker, "Role of quantum coherence in series resistors," Phys. Rev. B, Condens. Matter, no. 33, pp. 3020-3026, 1986.
    • (1986) Phys. Rev. B, Condens. Matter , Issue.33 , pp. 3020-3026
    • Buttiker, M.1
  • 6
    • 52649121536 scopus 로고    scopus 로고
    • M.Taghi Ahmadi, Ismail Saad, Michael L.P.Tan, Razali Ismail, and Vijay K. Arora The Ultimate Drift Velocity in Degenerately-Doped Silicon, pp. 569-573, Proceedings of the Regional Symposium on Microelectronics 2007 (RSM2007), Penang, Malaysia, December 3-6, 2007, IEEE Press, New Yotk.
    • M.Taghi Ahmadi, Ismail Saad, Michael L.P.Tan, Razali Ismail, and Vijay K. Arora "The Ultimate Drift Velocity in Degenerately-Doped Silicon," pp. 569-573, Proceedings of the Regional Symposium on Microelectronics 2007 (RSM2007), Penang, Malaysia, December 3-6, 2007, IEEE Press, New Yotk.
  • 7
    • 0034509141 scopus 로고    scopus 로고
    • Quantum Engineering of Nanoelectronic Devices: The Role of Quantum Emission in Limiting Drift Velocity and Diffusion Coefficient
    • December
    • V. K. Arora, "Quantum Engineering of Nanoelectronic Devices: The Role of Quantum Emission in Limiting Drift Velocity and Diffusion Coefficient," Microelectronic Journal, Volume 31, Issue 11-12, December 2000, pp. 853-859.
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    • Arora, V.K.1
  • 8
    • 0041525475 scopus 로고    scopus 로고
    • Ballistic Transport in High Electro Mobility Transistor
    • Jing Wang and Mark Lundstrom, " Ballistic Transport in High Electro Mobility Transistor," IEEE Transactions on Electron Devices, vol 50, pp. 1604-1610, 2003
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  • 9
    • 0036713397 scopus 로고    scopus 로고
    • Low ballistic mobility in submicron HEMT's
    • Sept
    • M. S. Shur, "Low ballistic mobility in submicron HEMT's," IEEE Electron Device Lett., vol. 23, pp. 511-513, Sept. 2002.
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  • 10
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    • David R. Greenberg and Jesus A. del Alamo, Velocity Saturation in the Extrinsic Device: A Fundamental Limit in HFET's, IEEE Transactions on Electron Devices, 41, 1334 , 1994.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.