Quantum nanoelectronics: Challenges and opportunities

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2008, Pages

  Arora, Vijay K ^a,b   Tan, Michael L P ^b,c  

^a WILKES UNIVERSITY   (United States)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

32-NM NODE; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DEVICE SIMULATIONS; GRAPHENE; HIGH VOLUME MANUFACTURING; HIGH-DENSITY; HIGH-SPEED; INTEGRATED CIRCUIT TECHNOLOGY; LAWS OF PHYSICS; LOW POWER; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; NANO-METER REGIMES; NANOMETER DIMENSIONS; NON-OHMIC TRANSPORT; NOVEL DEVICES; PERFORMANCE LIMITS; PHYSICAL LIMITATIONS; PHYSICAL PROCESS; PHYSICS-BASED; QUANTUM NANOELECTRONICS; SI MOSFET; SIMULATION PROGRAM; TECHNOLOGICAL ADVANCEMENT;

CARBON NANOTUBES; CHARGE COUPLED DEVICES; CIRCUIT SIMULATION; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON MULTIPLIERS; INTEGRATED CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES; VLSI CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 65949096306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2008.4770261     Document Type: Conference Paper

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