Current-voltage characteristics of a silicon nanowire transistor

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 547-549

  Taghi Ahmadi, Mohammad ^a   Houg Lau, Hui ^a   Ismail, Razali ^a   Arora, Vijay K ^a,b  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b WILKES UNIVERSITY   (United States)

Author keywords

Current voltage characteristics; Drift velocity; Nanowire transistor; Saturation velocity

Indexed keywords

BIOACTIVITY; CARRIER CONCENTRATION; CARRIER MOBILITY; DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; ELECTRIC WIRE; HIGH ELECTRON MOBILITY TRANSISTORS; NANOWIRES; TRANSISTORS; VELOCITY;

ASYMMETRICAL DISTRIBUTIONS; CARRIER VELOCITIES; DOPED SAMPLES; DOPED SILICONS; DRIFT VELOCITY; ELECTRIC-FIELD; FERMI VELOCITIES; HIGH ELECTRIC FIELDS; HIGH MOBILITIES; HIGH-SPEED APPLICATIONS; NANOWIRE TRANSISTOR; SATURATION VELOCITY; SILICON NANOWIRE TRANSISTORS; THERMAL VELOCITIES; ZERO FIELDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 61349185715     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.060     Document Type: Article

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